29 June 1998 Deep-ultraviolet antireflective coating with improved conformality, optical density, and etch rate
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Abstract
A new bottom antireflective coating (BARC) for 248 nm lithography is described. The new coating has an optical density of approximately 10/micrometers (k equals 0.41 and n equals 1.482) and plasma etches at rates higher than that of DUV resists depending on the etch conditions. Coating conformality is superior to older generation BARCs, also contributing to improved etch dynamics. Excellent 0.25 micrometers features have been obtained with ESCAP, Acetal and t-BOC type photoresists. The new BARC is spin coated from safe solvents and is spin bowl compatible with EBR and photoresist solvents.
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Douglas J. Guerrero, Douglas J. Guerrero, James D. Meador, James D. Meador, Gu Xu, Gu Xu, Hitoshi Suzuki, Hitoshi Suzuki, Yasuhisa Sone, Yasuhisa Sone, Vandana N. Krishnamurthy, Vandana N. Krishnamurthy, James B. Claypool, James B. Claypool, James E. Lamb, James E. Lamb, } "Deep-ultraviolet antireflective coating with improved conformality, optical density, and etch rate", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312412; https://doi.org/10.1117/12.312412
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