29 June 1998 Deposition of trace metals to a wafer surface from lithography materials
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This paper reports wafer level trace metal concentrations from typical lithography processing and models the process from bulk materials concentrations in order to establish meaningful material specifications. Working from a simple deposition model, we determined the critical volume responsible for a surface metal concentration. Using literature derived spin coat models, we explore how this critical volume can be explained by the spin coat process mechanisms. Results are reported using typical post pattern transfer photoresist removal steps: a photoresist ash step and a sulfuric/peroxide clean. Using the surface level results, a comparison is made to the SIA roadmaps, as well as effects on general transistor characteristics, to draw conclusions on the impact to device performance.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rob W. Ramage, Rob W. Ramage, Rita Vos, Rita Vos, Marc Meuris, Marc Meuris, Marcel Lux, Marcel Lux, } "Deposition of trace metals to a wafer surface from lithography materials", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312342; https://doi.org/10.1117/12.312342

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