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29 June 1998 Design of an etch-resistant cyclic olefin photoresist
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Abstract
In the quest for a high performance 193 nm photoresist with robust plasma etching resistance equivalent to or better than the DUV resists of today, we have focused on the use of cyclic olefin polymers. In this paper, we will discuss monomer synthesis, polymerization approaches, polymer properties and early lithographic results of 193 nm photoresists formulated from cyclic olefin polymeric materials made from a metal-catalyzed addition polymerization process. The goal of this work is to produce a 193 nm photoresist with excellent imaging performance and etch resistance exceeding DUV resists, and in fact approaching novolak-based photoresists.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert D. Allen, Juliann Opitz, Thomas I. Wallow, Richard A. Di Pietro, Donald C. Hofer, Saikumar Jayaraman, Karen A. Hullihan, Larry F. Rhodes, Brian L. Goodall, and Robert A. Shick "Design of an etch-resistant cyclic olefin photoresist", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312472
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