Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group

Katsuji Douki; Toru Kajita; Shin-Ichiro Iwanaga

doi:10.1117/12.312428

29 June 1998 Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group

Katsuji Douki, Toru Kajita, Shin-Ichiro Iwanaga

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312428
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A new type of polymerization system for phenolic resin is proposed for high performance positive-working i-line photoresists used for sub-quarter micron lithography. A new design of phenolic resin is also proposed. The effects of end group of phenolic resin are mainly discussed from the standpoint of the dissolution characteristics of the photoresist and their lithographic performances; the resolution of 0.20 micrometers (1L/1.5S) on BARC with an annular illumination aperture (NA equals 0.57, 2.3 (sigma) equals 0.70).

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Katsuji Douki, Toru Kajita, and Shin-Ichiro Iwanaga "Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312428

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