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29 June 1998 Discrimination enchancement in polysilsesquioxane-based positive resists for ArF lithography
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In order to establish surface imaging process using O2- RIE on ArF lithography, silicon containing bi-layer resists have been investigated. We synthesized cyclohexyl pendant silsesquioxane polymer to obtain high transparency at ArF wavelength. This polymer has ladder siloxane structure with high Si density (13 wt%), over 80%0.35 um transmittance at 193 nm, and has carboxylic acid partially protected by acid labile group for TMAH aq. development. Addition of base enhanced the slope of deprotecting reaction and suppressed acid diffusion. The function of specific amines as acid quencher was considered to cause `Proton-Jumping'. Substituting of carboxylic acid by alcohol type polar linkage increased alkali tolerance, adhesion force and polymer Tg. Standard 2.38wt% TMAH developer was applied and expanded the dissolution rate gap. For further improvement of the resolution, we increased alkali tolerance by introduction of tricyclodecanyl pendant and optimized alkali concentration of developer. As a result, suitable dissolution curve for surface imaging resists was realized and rectangular patterns were observed on bottom ARC.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Hatakeyama, M. Nakashima, I. Kaneko, Shigehiro Nagura, and Toshinobu Ishihara "Discrimination enchancement in polysilsesquioxane-based positive resists for ArF lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998);

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