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29 June 1998 Dry etching resistance of methacrylate polymers for ArF excimer laser lithography
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We have investigated dry-etching resistance of methacrylate polymers for use as ArF chemically amplified resists and proposed a new etching model that can predict the etching rate very accurately. The examined polymers were methacrylate polymers with alicyclic groups. The polymers were dry etched using a LAM TCP-9400 machine under the chlorine-based gas conditions used for poly-silicon etching. The obtained etching rate was explained in term of a carbon- atom-density parameter known as the ohnishi parameter. However, the fitting accuracy is not good enough especially for alicyclic polymers (R equals 0.87). And a ring parameter model also resulted in a similar fitting accuracy (R equals 0.86). Hence, we proposed a new model that introduced polymer-structure dependence into the carbon-atom-density model. The new model gives excellent agreement with measured data (R equals 0.99). And it is very useful in designing ArF resist polymers and predicting etching resistance of future ArF resists.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Ohfuji, Masayuki Endo, Makoto Takahashi, Takuya Naito, Tetsuya Tatsumi, Koichi Kuhara, and Masaru Sasago "Dry etching resistance of methacrylate polymers for ArF excimer laser lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998);

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