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29 June 1998 High-silicon-concentration TSI process for 193-nm lithography
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Abstract
A high-silicon-concentration top surface imaging (TSI) process for 193-nm lithography has been developed using vapor phase silylation, using dimethylaminopentamethyldisiloxane as a silylation agent and polydihydroxystyrene as a resist material. The etching rate of silylated resist can be explained by the relationship between the silicon content, the decomposition temperature, and the density. The pattern profile of the new TSI process can resolve 0.14 micrometers L/S. Although silylated layer flow occurs in a process below the glass transition temperature, the flow problem can be resolved by using a chemically amplified resist.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeyasu Mori, Taku Morisawa, Nobuyuki N. Matsuzawa, Yuko Kaimoto, Masayuki Endo, Takahiro Matsuo, Koichi Kuhara, Takeshi Ohfuji, and Masaru Sasago "High-silicon-concentration TSI process for 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312359
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