29 June 1998 Improving the performance of 193-nm photoresists based on alicyclic polymers
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Abstract
This paper reports our work on a series of alicyclic polymer-based photoresist platforms designed for 193 nm lithography. The polymers described here were prepared from derivatives of norbornene and appropriate co-monomers by either free radical or ring opening metathesis polymerization methods. A variety of techniques were explored as a means of enhancing the lithographic, optical, dissolution, and mechanical properties of photoresists formulated from these alicyclic polymers. Recent studies designed to improve the lithographic performance of photoresists formulated with these materials are described.
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Kyle Patterson, Uzodinma Okoroanyanwu, Tsutomu Shimokawa, Sungseo Cho, Jeff D. Byers, C. Grant Willson, "Improving the performance of 193-nm photoresists based on alicyclic polymers", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312356; https://doi.org/10.1117/12.312356
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