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29 June 1998 Lithographic performance of a dry-etch stable methacrylate resist at 193 nm
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Abstract
High resolution performance down to the 0.13 micrometers level is demonstrated in a methacrylate resist with pendent polycyclic side groups. The best performance is achieved with a bottom coat although interactions with the resist were still observed which led to the presence of scum in fine lines and to a large dose change relative to silicon. The demonstrated dry etch rate of the resist was found to be about 10% higher than APEX-E; predictions based on the ring parameter would have led us to expect a more favorable etch rate. The observed discrepancy has led us to speculate on possible exposure of the resist by the plasma environment and loss of the etch resistance polycyclic unit through evaporation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralph R. Dammel, Stanley A. Ficner, Joseph E. Oberlander, Axel Klauck-Jacobs, Munirathna Padmanaban, Dinesh N. Khanna, and Dana L. Durham "Lithographic performance of a dry-etch stable methacrylate resist at 193 nm", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312393
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