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29 June 1998 Monitoring photoacid generation in chemically amplified resist systems
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Abstract
A new, simple, highly sensitive, and reliable technique has been developed for measuring acid concentration in solutions and in thin polymer films. This technique is applicable to the study of photoacid generation in chemically amplified resist systems. It employs fluorescent, acid sensitive compounds such as N-(9-acrydinyl)acetamide which undergo large changes in fluorescence as a function of degree of protonation. We have used this technique to quantify the amount of acid generated as a function of 193 nm exposure dose in alicyclic polymer matrices containing photoacid generators such as triphenylsulfonium hexafluoroantimonate. We are continuing to explore the general utility of this new analytical technique which allows the study of diffusional processes and the determination of quantum efficiencies in thin polymer films of the kind used in deep-UV (KrF at 248 nm, ArF at 193 nm) lithography. Such data are of importance in the modeling of chemically amplified resist systems.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Uzodinma Okoroanyanwu, Jeff D. Byers, Ti Cao, Stephen E. Webber, and C. Grant Willson "Monitoring photoacid generation in chemically amplified resist systems", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312357
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