29 June 1998 Negative-type chemically amplified resists for ArF excimer laser lithography
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A new negative resist consisting of an anhydride, an acrylic acid, an epoxy crosslinker and a photoacid generator is introduced. In the exposed area, the epoxy groups of the crosslinker react with anhydride groups and/or carboxylic acids in the polymer under existence of photogenerated acid as a catalyst during post exposure baking. A 0.20 micrometers pattern was resolved by an ArF exposure at a dose of 28 mJ/cm2.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takuya Naito, Takuya Naito, Makoto Takahashi, Makoto Takahashi, Takeshi Ohfuji, Takeshi Ohfuji, Masaru Sasago, Masaru Sasago, } "Negative-type chemically amplified resists for ArF excimer laser lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312364; https://doi.org/10.1117/12.312364

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