29 June 1998 Negative-type chemically amplified resists for ArF excimer laser lithography
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A new negative resist consisting of an anhydride, an acrylic acid, an epoxy crosslinker and a photoacid generator is introduced. In the exposed area, the epoxy groups of the crosslinker react with anhydride groups and/or carboxylic acids in the polymer under existence of photogenerated acid as a catalyst during post exposure baking. A 0.20 micrometers pattern was resolved by an ArF exposure at a dose of 28 mJ/cm2.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takuya Naito, Takuya Naito, Makoto Takahashi, Makoto Takahashi, Takeshi Ohfuji, Takeshi Ohfuji, Masaru Sasago, Masaru Sasago, "Negative-type chemically amplified resists for ArF excimer laser lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312364; https://doi.org/10.1117/12.312364

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