29 June 1998 Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography
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Abstract
A new polar alicyclic polymer has been developed as an ArF negative resist polymer. Poly(carboxytetracyclo[4.4.0.12,517,10] dodecyl acrylate-hydroxytricyclo[5.2.1.02,6]decyl acrylate (polyCTCDDAm-TCDAOHn)) has carboxyl and hydroxyl groups. It was founded that reactivity of the hydroxyl group was much higher than that of the carboxyl group in the acid- catalyzed crosslinking reaction. Poly(CTCDDA32-TCDAOH68) exhibits good solubility (0.5 micrometers /sec) in the standard developer (2.38% TMAH aq.), high transparency (70%/0.5 micrometers ) at 193-nm and high thermal stability (decomposition point: 230 degree(s)C). A chemically amplified negative resist composed of this polymer and 1,3,4,6- tetrakis(methoxymethyl)glicoluril (TMGU) provided a resolution of 0.18-micrometers L/S pattern with an ArF exposure system (NA equals 0.55) at a 9.2 mJ/cm2 dose.
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Shigeyuki Iwasa, Shigeyuki Iwasa, Kaichiro Nakano, Kaichiro Nakano, Katsumi Maeda, Katsumi Maeda, Etsuo Hasegawa, Etsuo Hasegawa, } "Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312460; https://doi.org/10.1117/12.312460
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