29 June 1998 Novel single-layer photoresist containing cycloolefins for 193 nm
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New matrix resins containing maleic anhydride and cycloolefin units for ArF excimer laser resist have been developed. Several series of these matrix resins having good dry-etching durability were prepared by free radical polymerization using AlBN as free radical initiator. All of the resists using the matrix resins revealed good coating uniformity and adhesion to silicon wafer, and were readily soluble in a variety of resist solvents such as MMP, EEP, PGMEA and EL. In preliminary 193 nm testing a resist formulated with the matrix resins sulfonium triflate as photoacid generator afforded positive images with 0.14 micrometers L/S resolution. In this paper, we will discuss the polymerization results and lithographic properties for 193 nm exposure tool.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joo Hyeon Park, Dong-Chul Seo, Ki-Dae Kim, Sun-Yi Park, Seong-Ju Kim, Hosull Lee, Jae Chang Jung, Cheol-Kyu Bok, Ki-Ho Baik, "Novel single-layer photoresist containing cycloolefins for 193 nm", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312449; https://doi.org/10.1117/12.312449

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