Positive bilayer resists for 248- and 193-nm lithography

Ratnam Sooriyakumaran; Gregory M. Wallraff; Carl E. Larson; Debra Fenzel-Alexander; Richard A. Di Pietro; Juliann Opitz; Donald C. Hofer; Douglas C. LaTulip Jr.; John P. Simons; Karen E. Petrillo; Katherina Babich; Marie Angelopoulos; Qinghuang Lin; Ahmad D. Katnani

doi:10.1117/12.312411

29 June 1998 Positive bilayer resists for 248- and 193-nm lithography

Ratnam Sooriyakumaran, Gregory M. Wallraff, Carl E. Larson, Debra Fenzel-Alexander, Richard A. Di Pietro, Juliann Opitz, Donald C. Hofer, Douglas C. LaTulip Jr., John P. Simons, Karen E. Petrillo, Katherina Babich, Marie Angelopoulos, Qinghuang Lin, Ahmad D. Katnani

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312411
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

We have designed and developed new silicon containing methacrylate monomers that can be used in bilayer resist systems. New monomers were developed because the commercially available silicon monomers were found to be unsuitable for our applications. During the course of the investigation we determined that these monomers were acid labile. We have developed a high resolution DUV bilayer resist system based on these monomers. Although most of our work was concentrated on 248 nm lithography, we have demonstrated that this chemistry can be extended to 193 nm applications.

Citation Download Citation

Ratnam Sooriyakumaran, Gregory M. Wallraff, Carl E. Larson, Debra Fenzel-Alexander, Richard A. Di Pietro, Juliann Opitz, Donald C. Hofer, Douglas C. LaTulip Jr., John P. Simons, Karen E. Petrillo, Katherina Babich, Marie Angelopoulos, Qinghuang Lin, and Ahmad D. Katnani "Positive bilayer resists for 248- and 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312411

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