29 June 1998 Rapid simulation of silylation and the role of physical mechanisms in profile shapes
Author Affiliations +
Abstract
A rigorous simulator which includes the highly nonlinear diffusion and stress dependent reactions present in silylation is presented and used to assess the role of the key physical parameters in the resultant profile shapes for silicon uptake. The silylation model implemented includes (1) the relaxation of the polymer during silylation, (2) the resultant increase in the diffusivity of the silylating agent as a function of the resist matrix expansion, as well as a (3) local reaction rate retardation due to stresses associated with nonuniform resist swelling. The resulting differential equations are solved utilizing a Krylov subspace Newton convergence accelerator. A greater than one order of magnitude decrease is observed in simulation times as compared to traditional numerical techniques. Simulations of silylated profiles with various silylation uptake regimes elucidate the interplay of the physical mechanisms model in determining final silylation depth and sidewall angle.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco Antonio Zuniga, Marco Antonio Zuniga, Ebo H. Croffie, Ebo H. Croffie, Andrew R. Neureuther, Andrew R. Neureuther, } "Rapid simulation of silylation and the role of physical mechanisms in profile shapes", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312366; https://doi.org/10.1117/12.312366
PROCEEDINGS
14 PAGES


SHARE
Back to Top