29 June 1998 Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-μm geometries
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Abstract
One such issue is the quantitative control of critical dimension (CD) and how to calibrate fab contamination levels to linewidth control. Since most fabs build several generations of devices, contamination levels for older generations may not be suitable for new generations. Therefore, studies to control CD for each generation are required to determine the effectiveness of filtration schemes. In this paper the authors have investigated CD control for imaging dimensions from 0.25 micrometers to 0.15 micrometers . We have also correlated this data back to chemical monitoring levels to determine CD vs. PED stability for these geometry's to determine the contamination level tolerance. Additionally, the authors have generated process windows to determine the effect such delays have on process windows.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, Will Conley, Carl P. Babcock, Carl P. Babcock, John A. Lilygren, John A. Lilygren, Clifford P. Sandstrom, Clifford P. Sandstrom, Nigel R. Farrar, Nigel R. Farrar, John Piatt, John Piatt, Devon A. Kinkead, Devon A. Kinkead, William Goodwin, William Goodwin, Oleg P. Kishkovich, Oleg P. Kishkovich, John K. Higley, John K. Higley, Phil Cate, Phil Cate, } "Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-μm geometries", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312479; https://doi.org/10.1117/12.312479
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