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29 June 1998 Recent advantages of bilevel resists based on silsesquioxane for ArF lithography
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We evaluated three chemically amplified positive-tone resists which are mainly based on cyclo-hexyl-carboxylic- acid-silsesquioxane. A resist had a good resolution capability of K1 equals 0.435 and a process window of 0.4 micrometers depth of focus at 0.15 micrometers L/S pattern, however its dissolution characteristics was poor. The resist that was improved the resistance to aqueous base developer, had an excellent resolution capability of K1 equals 0.404. It had a permissive sensitivity of 13 mJ/cm2. The bilayer pattern profile dependencies on the transparency of the upper layer resist and the line edge roughness of the resist before and after the dry-development process were also examined. These results showed the applicability of the silsesquioxane based resist to the bilayer resist process for ArF lithography.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taku Morisawa, Nobuyuki N. Matsuzawa, Shigeyasu Mori, Yuko Kaimoto, Masayuki Endo, Takeshi Ohfuji, Koichi Kuhara, and Masaru Sasago "Recent advantages of bilevel resists based on silsesquioxane for ArF lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998);

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