Structural basis for high thermal stability of a resist

Sanjay Malik; Andrew J. Blakeney; Lawrence Ferreira; Medhat A. Toukhy; John E. Ferri

doi:10.1117/12.312478

29 June 1998 Structural basis for high thermal stability of a resist

Sanjay Malik, Andrew J. Blakeney, Lawrence Ferreira, Medhat A. Toukhy, John E. Ferri

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312478
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A new class of novolaks capable of self associating has been synthesized. The associating structures are resulted via extended network of hydrogen bonding. Softening temperatures of the associating novolaks are found to be 15 - 25 degree(s)C higher than their non-associating analogs. The photoresist formulated with such associating novolaks have heat deformation temperature in the range of 130 - 140 degree(s)C. Features with sub 0.35 micrometers could be resolved using i-Line exposure. Site specific hydrogen bonding in such associating novolaks is studied by NMR and molecular simulations.

Citation Download Citation

Sanjay Malik, Andrew J. Blakeney, Lawrence Ferreira, Medhat A. Toukhy, and John E. Ferri "Structural basis for high thermal stability of a resist", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312478

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