29 June 1998 Structural basis for high thermal stability of a resist
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Abstract
A new class of novolaks capable of self associating has been synthesized. The associating structures are resulted via extended network of hydrogen bonding. Softening temperatures of the associating novolaks are found to be 15 - 25 degree(s)C higher than their non-associating analogs. The photoresist formulated with such associating novolaks have heat deformation temperature in the range of 130 - 140 degree(s)C. Features with sub 0.35 micrometers could be resolved using i-Line exposure. Site specific hydrogen bonding in such associating novolaks is studied by NMR and molecular simulations.
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Sanjay Malik, Sanjay Malik, Andrew J. Blakeney, Andrew J. Blakeney, Lawrence Ferreira, Lawrence Ferreira, Medhat A. Toukhy, Medhat A. Toukhy, John E. Ferri, John E. Ferri, "Structural basis for high thermal stability of a resist", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312478; https://doi.org/10.1117/12.312478
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