Sub-0.30-um i-line photoresist: formulation strategy and lithographic characterization

Jaclyn J. Yu; Catherine C. Meister; Gerald Vizvary; Cheng-Bai Xu; Patricia Fallon

doi:10.1117/12.312389

29 June 1998 Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization

Jaclyn J. Yu; Catherine C. Meister; Gerald Vizvary; Cheng-Bai Xu; Patricia Fallon

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312389
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

High contrast i-line resist have been traditionally achieved by using a blend of high molecular weight fractionated polymers with small dissolution rate enhancing additives. The fractionated polymer generally has low polydispersity and is manufactured through a costly, time consuming, and environmentally unfriendly fractionation process. A new Shipley resist, Ultra-i 120, has demonstrated sub-0.3 micrometers resolution with desired process capability without the use of fractionated polymers or dissolution rate enhancers. We achieved the high resolution by using the strategy of formulating a narrowly polydispersed, highly inhibiting, non-fractionated polymer with a blend of large, highly inhibiting PACs (photo-active compounds) with oligomeric ballast groups and smaller co-PACs. The high inhibition effects from the large PAC and the narrow poly-dispersivity of the polymer gives the resist very high contrast. The smaller co-PAC helps to enhance the photospeed of the resist and minimize the standing waves originating from the large PAC. The formulation strategy and the lithographic performance of Ultra-i 120 will be described using standard 90 degree(s)C soft bake and 110 degree(s)C PEB process and 2.38% TMAH (non-surfactant) developing process. The factors contributing to the high resist contrast will be identified and discussed.

Citation Download Citation

Jaclyn J. Yu, Jaclyn J. Yu, Catherine C. Meister, Catherine C. Meister, Gerald Vizvary, Gerald Vizvary, Cheng-Bai Xu, Cheng-Bai Xu, Patricia Fallon, Patricia Fallon, } "Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312389; https://doi.org/10.1117/12.312389

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