Sub-0.30-um i-line photoresist: formulation strategy and lithographic characterization

Jaclyn J. Yu; Catherine C. Meister; Gerald Vizvary; Cheng-Bai Xu; Patricia Fallon

doi:10.1117/12.312389

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29 June 1998 Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization

Jaclyn J. Yu, Catherine C. Meister, Gerald Vizvary, Cheng-Bai Xu, Patricia Fallon

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Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312389
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

High contrast i-line resist have been traditionally achieved by using a blend of high molecular weight fractionated polymers with small dissolution rate enhancing additives. The fractionated polymer generally has low polydispersity and is manufactured through a costly, time consuming, and environmentally unfriendly fractionation process. A new Shipley resist, Ultra-i 120, has demonstrated sub-0.3 micrometers resolution with desired process capability without the use of fractionated polymers or dissolution rate enhancers. We achieved the high resolution by using the strategy of formulating a narrowly polydispersed, highly inhibiting, non-fractionated polymer with a blend of large, highly inhibiting PACs (photo-active compounds) with oligomeric ballast groups and smaller co-PACs. The high inhibition effects from the large PAC and the narrow poly-dispersivity of the polymer gives the resist very high contrast. The smaller co-PAC helps to enhance the photospeed of the resist and minimize the standing waves originating from the large PAC. The formulation strategy and the lithographic performance of Ultra-i 120 will be described using standard 90 degree(s)C soft bake and 110 degree(s)C PEB process and 2.38% TMAH (non-surfactant) developing process. The factors contributing to the high resist contrast will be identified and discussed.

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Jaclyn J. Yu, Catherine C. Meister, Gerald Vizvary, Cheng-Bai Xu, and Patricia Fallon "Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312389

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