29 June 1998 ArF lasers for production of semiconductor devices with CD<0.15 μm
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Abstract
The present day notion of the extensibility of KrF laser technology to ArF is revisited. We show that a robust solution to ArF requirements can be met by significantly altering the laser's core technology-discharge chamber, pulsed power and optics. With these changes, a practical ArF tool can be developed. Some of the laser specifications are: Bandwidth: 0.6 pm (FWHM) 1.75 pm (95% Included Energy); Average Power: 5 W; Repetition Rate: 1000 Hz; Energy Stability (3(sigma) ): 20% (burst mode) 8% (continuous); Pulse Width: 25 ns.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas P. Duffey, Thomas P. Duffey, Todd J. Embree, Todd J. Embree, Toshihiko Ishihara, Toshihiko Ishihara, Richard G. Morton, Richard G. Morton, William N. Partlo, William N. Partlo, Tom A. Watson, Tom A. Watson, Richard L. Sandstrom, Richard L. Sandstrom, } "ArF lasers for production of semiconductor devices with CD<0.15 μm", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310731; https://doi.org/10.1117/12.310731
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