Bottom-ARC optimization methodology for 0.25-um lithography and beyond

Maaike Op de Beeck; Geert Vandenberghe; Patrick Jaenen; Feng-Hong Zhang; Christie Delvaux; Paul Richardson; Ilse van Puyenbroeck; Kurt G. Ronse; James E. Lamb III; Johan B. C. van der Hilst; Johannes van Wingerden

doi:10.1117/12.310762

29 June 1998 Bottom-ARC optimization methodology for 0.25-μm lithography and beyond

Maaike Op de Beeck, Geert Vandenberghe, Patrick Jaenen, Feng-Hong Zhang, Christie Delvaux, Paul Richardson, Ilse van Puyenbroeck, Kurt G. Ronse, James E. Lamb III, Johan B. C. van der Hilst, Johannes van Wingerden

Author Affiliations +

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310762
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

This paper reports on an optimization methodology for BARC/resist processes in order to obtain best CD-control on various substrate topographies. A selection of resist and BARC materials is studied by means of simulations and experiments. Two BARC properties, turned out to be of major importance: planarization effects on topography and etch behavior. The topography itself is very important too: step height and lateral dimensions have a severe influence on CD control. Based on a new evaluation technique, the use of topographical swing curves, the optimum thickness of the BARC layer and of the resist layer are determined.

Citation Download Citation

Maaike Op de Beeck, Geert Vandenberghe, Patrick Jaenen, Feng-Hong Zhang, Christie Delvaux, Paul Richardson, Ilse van Puyenbroeck, Kurt G. Ronse, James E. Lamb III, Johan B. C. van der Hilst, and Johannes van Wingerden "Bottom-ARC optimization methodology for 0.25-μm lithography and beyond", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310762

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