29 June 1998 Bottom-ARC optimization methodology for 0.25-μm lithography and beyond
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This paper reports on an optimization methodology for BARC/resist processes in order to obtain best CD-control on various substrate topographies. A selection of resist and BARC materials is studied by means of simulations and experiments. Two BARC properties, turned out to be of major importance: planarization effects on topography and etch behavior. The topography itself is very important too: step height and lateral dimensions have a severe influence on CD control. Based on a new evaluation technique, the use of topographical swing curves, the optimum thickness of the BARC layer and of the resist layer are determined.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maaike Op de Beeck, Geert Vandenberghe, Patrick Jaenen, Feng-Hong Zhang, Christie Delvaux, Paul Richardson, Ilse van Puyenbroeck, Kurt G. Ronse, James E. Lamb, Johan B. C. van der Hilst, Johannes van Wingerden, "Bottom-ARC optimization methodology for 0.25-μm lithography and beyond", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310762; https://doi.org/10.1117/12.310762

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