29 June 1998 Bottom-ARC optimization methodology for 0.25-μm lithography and beyond
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Abstract
This paper reports on an optimization methodology for BARC/resist processes in order to obtain best CD-control on various substrate topographies. A selection of resist and BARC materials is studied by means of simulations and experiments. Two BARC properties, turned out to be of major importance: planarization effects on topography and etch behavior. The topography itself is very important too: step height and lateral dimensions have a severe influence on CD control. Based on a new evaluation technique, the use of topographical swing curves, the optimum thickness of the BARC layer and of the resist layer are determined.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maaike Op de Beeck, Maaike Op de Beeck, Geert Vandenberghe, Geert Vandenberghe, Patrick Jaenen, Patrick Jaenen, Feng-Hong Zhang, Feng-Hong Zhang, Christie Delvaux, Christie Delvaux, Paul Richardson, Paul Richardson, Ilse van Puyenbroeck, Ilse van Puyenbroeck, Kurt G. Ronse, Kurt G. Ronse, James E. Lamb, James E. Lamb, Johan B. C. van der Hilst, Johan B. C. van der Hilst, Johannes van Wingerden, Johannes van Wingerden, } "Bottom-ARC optimization methodology for 0.25-μm lithography and beyond", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310762; https://doi.org/10.1117/12.310762
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