29 June 1998 Effect of stage synchronization error of KrF scan on 0.18-μm patterning
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Abstract
The stage vibration effect on imaging performance, such as DOF and CD uniformity is evaluated experimentally and compared with simulation analysis. Various kinds of 0.25 - 0.18 micrometer patterns are investigated by using KrF excimer scanner with 0.6 NA and 0.75 partial coherency and two types of chemically amplified positive resists. In the case of a standard resist for 0.25 micrometer level patterning, the CD at the best focus changed and the DOF decreased rapidly with increasing moving standard deviation (MSD) in 0.18 micrometer level pattern formation. Allowable MSD value of L&S pattern was estimated to be around 25 nm. To improve the stage synchronous error margin, the application of a high resolution resist was effective on L&S and isolated space patterns (about 40 nm), but showed little improvement for isolated line and hole patterns. Therefore, totally allowable MSD value was still about 30 nm. In particular it was found that both isolated line and hole patterns were very sensitive to stage vibration effect. Strict stage control has to be required for 0.18 micrometer patterns even if the high resolution resist is used.
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Takayuki Uchiyama, Takeo Hashimoto, Masashi Fujimoto, Seiji Matsuura, Tamio Yamazaki, Kunihiko Kasama, "Effect of stage synchronization error of KrF scan on 0.18-μm patterning", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310802; https://doi.org/10.1117/12.310802
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