29 June 1998 Laser pattern-generation technology below 0.25 μm
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Abstract
The projected rapid reduction in mask minimum feature size from the 250 nm to the 100 nm wafer generation will drive laser pattern generators to deep UV wavelengths. Commercially available sources exist in the 250 nm wavelength region using nonlinear optical materials to frequency double longer wavelength laser lines. Nonlinear optical materials, such as SBBO and KBBF, exist for wavelengths below 200 nm but they have not been commercialized. Second harmonic generation in intracavity or mode-locked, external resonant-ring laser configurations can be used to produce sub-200 nm radiation. Existing system architectures are shown to be easily modified to use pulsed sources with a high repetition rate. Advances in nonlinear optical materials, laser design, and system architecture will ensure that laser pattern generation will be an effective maskmaking technology for the next decade.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul C. Allen, Paul C. Allen, "Laser pattern-generation technology below 0.25 μm", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310774; https://doi.org/10.1117/12.310774
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