29 June 1998 Lithographic process simulation for scanners
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Abstract
In scanner systems wafer and reticle move continuously with respect to the projection optics. This movement across the image field results in varying lateral shift and focus positions and in an averaging of aberrations from different field positions of the projection system. Several approaches for the effective simulation of these effects are discussed. Based on simulated and experimental data, scanner effect are quantified and compared to results of static stepper exposure.
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Andreas Erdmann, Michael Arnz, Mireille Maenhoudt, Jan Baselmans, Jan-Chris van Osnabrugge, "Lithographic process simulation for scanners", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310746; https://doi.org/10.1117/12.310746
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