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29 June 1998 Optimization of stepper parameters and its design rule for an attenuated phase-shifting mask
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Abstract
An attenuated phase-shifting mask is favorable lithography technique for enhancing the depth-of-focus for isolated hole. However, it is restricted by sidelobe printing at dense array holes. To reduce the sidelobe printing, various methods such as surface insoluble layer, add an auxiliary hole, and optimization of NA and sigma were investigated. The method of surface insoluble layer was not effective for the dense array holes and CD uniformity was not improved. The method that adds an auxiliary hole at sidelobe position of highly dense array pattern can reduce the sidelobe printing completely, but mask CD and mask defect inspection as well as automatic layout of auxiliary holes for nonrepeating patterns in periphery area will be issued. In order to optimize the NA and sigma value, DOF and sidelobe printing were considered. Also CD control is studied by considering the CD linearity and optical proximity correction (OPC) as mask print bias is applied. Design rule for attPSM was suggested at optimized and fixed conditions.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Eil Kim, Stanley Barnett, and James Shih "Optimization of stepper parameters and its design rule for an attenuated phase-shifting mask", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310782
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