29 June 1998 Proposal of a composite phase-shifting mask for 0.15-μm hole-pattern delineation using KrF exposure
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We propose a new pattern delineation technology where composite phase-shifting masks are used for KrF exposure. Half-tone phase-shifting masks (HTPSMs) are widely used for delineating 0.20- to 0.25-micrometer hole patterns. However, the process latitude of the pattern transfer for 0.18- micrometer hole patterns or smaller is very tight, and it is quite difficult to delineate such small patterns using conventional HTPSMs with KrF exposure for mass production. However, by using a newly developed composite phase-shifting mask, we have been able to simultaneously delineate 0.18- micrometer or smaller isolated hole patterns and dense hole patterns with sufficient process latitude. Two types of phase- shifting technology were integrated in a single phase-shifting mask that had both a Cr region and a halftone region. For the delineation of isolated hole patterns, eight outrigger sub- slots were octagonally arrayed around each isolated hole pattern (00-HTPSM: octagonal outrigger HTPSM). For the delineation of dense hole patterns, an alternating phase assignment was applied (alternating PSM). We found through both simulation and experiment that the focus latitude could be expanded by the use of this composite phase-shifting mask.
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Norio Hasegawa, Katsuya Hayano, Akira Imai, Naoko Asai, Shinji Okazaki, "Proposal of a composite phase-shifting mask for 0.15-μm hole-pattern delineation using KrF exposure", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310781; https://doi.org/10.1117/12.310781

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