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13 September 1982 Mix And Match Of 10:1 Wafer Steppers With Die-By-Die Alignment To 1:1 Proximity And Projection Systems
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Abstract
We report here the use of automatic die-by-die alignment to overlay 10:1 wafer-stepper images on patterns delineated by 1:1 proximity and projection systems. The motivation for these programs arises from considerations of cost-effectiveness and productivity while upgrading existing IC fab lines; 1:1 lithographic systems already in place can be used to generate non-critical layers, while the wafer steppers can be used to align and delineate the patterns of critical layers. Excellent intra-die overlay match is demonstrated, mixing with some of the more prevalent 1:1 systems. Practical issues relating to net wafer throughput are also illuminated.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. L. Stover, N. E. David, and T. H. Lewis "Mix And Match Of 10:1 Wafer Steppers With Die-By-Die Alignment To 1:1 Proximity And Projection Systems", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933568
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