14 September 1998 Improvement of luminescent properties of thin-film phosphors by excimer laser processing
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Proceedings Volume 3343, High-Power Laser Ablation; (1998) https://doi.org/10.1117/12.321540
Event: High-Power Laser Ablation, 1998, Santa Fe, NM, United States
Thin-films of europium doped yttrium oxide, (Y1-xEux)2O3, were deposited on sapphire substrates by metallorganic chemical vapor deposition. The films, -400 nm thick, were weakly luminescent in the as-deposited condition. A KrF laser was pulsed once on the surface of the films at a fluence level between 0.9 - 2.3 J/cm2. One pulse was sufficient to melt the film, which increased the photoluminescent emission intensity. Melting of a rough surface resulted in smoothing of the surface. The highest energy pulse resulted in a decrease in luminous intensity, presumably due to material removal. Computational modeling of the laser melting and ablation process predicted that a significant fraction of the film is removed by ablation at the highest fluence levels.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joanna M. McKittrick, C. F. Bacalski, Gustavo A. Hirata, Robert C. Sze, Judith R. Mourant, K. V. Salazar, M. Trkula, "Improvement of luminescent properties of thin-film phosphors by excimer laser processing", Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); doi: 10.1117/12.321540; https://doi.org/10.1117/12.321540

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