1 January 1998 Monte Carlo computer simulation of ion sputtering
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Proceedings Volume 3345, International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering; (1998) https://doi.org/10.1117/12.299605
Event: International Workshop on New Approaches to High Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering, 1997, St. Petersburg, Russian Federation
Abstract
Using the sputtering version of the Monte-Carlo (MC) computer code TRIRS (TRansport of Ions and Recoils in Solid) we studied the collision sputtering processes under ion bombardment of a structureless target. Basically, the TRIRS calculation procedure is similar to the one used in the well known TRIM code. The important feature of the TRIRS with respect to other similar MC codes is the elaborate design of the particles trajectories, i.e., the scattering angle is calculated exactly using a scattering integral; the asymptotic trajectories of particles are computed taking into account a `time integral' for the specific interatomic potential used in calculation; during low energy events not only binary collisions, but also many-bode interaction may be taken into account. Comparing the calculation results and experimental data, we can see that TRIRS code is more realistic than TRIM in modeling the low-energy interatomic collisions, which dominate in sputtering processes. The special dynamic version of TRIRS code (DYTRIRS) was used to study the sputtering in the course of high-fluence irradiation when the target may be modified during irradiation. The high-fluence effects in preferential sputtering have also been discussed.
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Evgeni E. Zhurkin, Evgeni E. Zhurkin, Dmitrij P. Ivanov, Dmitrij P. Ivanov, } "Monte Carlo computer simulation of ion sputtering", Proc. SPIE 3345, International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering, (1 January 1998); doi: 10.1117/12.299605; https://doi.org/10.1117/12.299605
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