21 August 1998 Development of GaAs JFETs for cryogenic electronic circuits
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Abstract
GaAs JFET with various gate sizes, which ranges from 0.5 to 200 micrometers in gate length and from 2 to 200 micrometers in gate width, are fabricated and their DC characteristics and low- frequency noise spectra are measured at low temperatures in order to develop cryogenic electronic circuits for a far-IR detector array on board a satellite such as the Japanese IR satellite. We obtained the following results from the noise measurements: (1) Noise spectra of GaAs JFETs are dominated by a 1/f noise and include some generation-recombination noises in low-frequencies. (2) The 1/f noise voltage is found to remarkably depend on both the gate length and the drain-source voltage, but the gate width and the gate-source voltage have not almost concern with the 1/f noise voltage. Therefore, we suppose that the electric field in the channel of the GaAs JFET mainly contributes to the 1/f noise. By using these characteristics, the GaAs JFET having very low power dissipation and very low noise will be designed for cryogenic readout circuits at low temperatures.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenichi Okumura, Kenichi Okumura, Iwao Hosako, Iwao Hosako, Yukari Yamashita-Yui, Yukari Yamashita-Yui, Makoto Akiba, Makoto Akiba, Norihisa Hiromoto, Norihisa Hiromoto, "Development of GaAs JFETs for cryogenic electronic circuits", Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); doi: 10.1117/12.317307; https://doi.org/10.1117/12.317307
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