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21 August 1998 Development of stressed Ge:Ga 2D array
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Abstract
We are developing a stressed Ge:Ga 2D array detector that will be used for balloon-borne and satellite-born astronomical observations at wavelength between 100 and 200 micrometers . We have succeeded in making a 4 X 8 element stressed array detector with a stress of 600 N/mm2 and responsivity peak wavelength moved to about 165 micrometers . This has the largest number of pixels at the present time. The responsivities of the detector are high enough as well as those currently in use. This detector has a compact structure and a small total pixel size, and thus, it can be used for satellite-born instruments that have severe space limitation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shin'ichiro Makiuti, Yasuo Doi, Hiroshi Shibai, Norihisa Hiromoto, Takao Nakagawa, Mitsunobu Kawada, Kenichi Okumura, and Haruyuki Okuda "Development of stressed Ge:Ga 2D array", Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); https://doi.org/10.1117/12.317308
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