21 August 1998 GaAs homojunction far-infrared detectors for astronomy applications
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A high performance, bias tunable, p-GaAs homojunction interfacial work function internal photoemission far-IR (FIR) detector has been demonstrated. A responsivity of 3.10 +/- 0.05 A/W, a quantum efficiency of 12.5 percent, and a detectivity D* of 5.9 X 1010 cm (root) Hz/W, were obtained at 4.2K, for cutoff wavelengths form 80 to 100 micrometers . The bias dependences of quantum efficiency, detectivity, and cutoff wavelength have been measured and are well explained by the theoretical models. The cutoff wavelength is modeled by a modified high density theory, and the quantum efficiency is predicted by scaling the free carrier absorption coefficient linearly with the doping concentration. The effect of the number of layers on detector performance and the uniformity of the detectors have been discussed. A comparison with Ge:GA photoconductive detectors suggests that a similar or even better performance may be obtainable.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. Unil Perera, A. G. Unil Perera, W. Z. Shen, W. Z. Shen, M. H. Francombe, M. H. Francombe, Mark A. Shure, Mark A. Shure, Hui Chun Liu, Hui Chun Liu, Margaret Buchanan, Margaret Buchanan, William J. Schaff, William J. Schaff, "GaAs homojunction far-infrared detectors for astronomy applications", Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); doi: 10.1117/12.317293; https://doi.org/10.1117/12.317293


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