20 April 1998 Determination of the concentration of shallow impurities in semi-insulating GaAs by low-temperature (77 K) photoluminescence
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306220
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The detailed analysis of the low-temperature (77 K) photoluminescence spectra of undoped semi-insulating GaAs crystals containing different concentrations of shallow impurities Zn, C and Si is given. A linear correlation between the reduced intensities of the Zn, C and Si acceptor-induced emission bands and the concentrations of Zn, C and Si atoms is found. As a result the calibration dependences--the ratio of the intensity of the acceptor- induced emission band to the intensity of the near intrinsic emission band as a function of the impurity concentration were obtained. The above tabulated curves could be successfully used for the determination of the concentrations of shallow impurities Zn, C and Si by 77 K photoluminescence spectra measurements in any semi- insulating GaAs crystals.
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K. D. Glinchuk, N. M. Litovchenko, Anatoliy V. Prokhorovich, Oksana N. Stril'chuk, "Determination of the concentration of shallow impurities in semi-insulating GaAs by low-temperature (77 K) photoluminescence", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306220; https://doi.org/10.1117/12.306220
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