20 April 1998 Diagnostics of noncrystalline films by using interference of Raman signals in thin and superthin films
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306250
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The depth dependence of Raman spectra of a-GeS2-type films having a different optical thickness ((lambda) /4 and (lambda) /2) and their refractive index have been investigated. The model of a layered-inhomogeneous structure of film has been proposed. There have been distinguished: near-surface region (up to 50 angstroms), central part and transition film-substrate region (up to 300 angstroms).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladymyr M. Mitsa, Vladymyr M. Mitsa, } "Diagnostics of noncrystalline films by using interference of Raman signals in thin and superthin films", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306250; https://doi.org/10.1117/12.306250
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