20 April 1998 Effect of impurities on the value of the bulk laser damage threshold of KDP single crystals
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306278
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The paper is devoted to studying the influence of Cu, Si, Pb and Cr impurities (possessing no absorption bands at the wavelength of acting laser irradiation) on the value of bulk laser damage threshold and UV absorption in KDP single crystals. It is shown that for the investigated concentration range (1(DOT)10-5 - 1(DOT)10-2 mass%) laser damage threshold essentially decreases with raising the concentration of impurity ions in the crystal lattice. The maximal value of the said characteristic (approximately 40 J/cm2) is found to be achieved in the case when the concentration of impurities is not less than 1(DOT)10-5 mass%.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vitaly I. Salo, Vitaly I. Salo, Marina I. Kolybayeva, Marina I. Kolybayeva, Viacheslav M. Puzikov, Viacheslav M. Puzikov, Igor M. Pritula, Igor M. Pritula, V. G. Vasil'chuk, V. G. Vasil'chuk, } "Effect of impurities on the value of the bulk laser damage threshold of KDP single crystals", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306278; https://doi.org/10.1117/12.306278
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