20 April 1998 Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306211
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Temporal characteristics of the carriers recombination were investigated in different types of GaAs/AlAs superlattices by the time-resolved photoluminescence spectroscopy. The peculiarities of the electron-hole transitions were established for the superlattices studied in the dependence of the superlattice type and the width of quantum well and barrier layers. In particular, the conditions of existence of free and localized on the interface roughness excitons were found.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir G. Litovchenko, Vladimir G. Litovchenko, Dmytro V. Korbutyak, Dmytro V. Korbutyak, Sergiy G. Krylyuk, Sergiy G. Krylyuk, Holger T. Grahn, Holger T. Grahn, R. Klann, R. Klann, Klaus H. Ploog, Klaus H. Ploog, } "Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306211; https://doi.org/10.1117/12.306211
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