Infrared spectroscopy of luminescent porous silicon

Vladimir Arsenovich Makara; V. S. Stashhuk; V. B. Shevchenko

doi:10.1117/12.306194

20 April 1998 Infrared spectroscopy of luminescent porous silicon

Vladimir Arsenovich Makara, V. S. Stashhuk, V. B. Shevchenko

Author Affiliations +

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306194
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The photoluminescence (PL) and infrared (IR) absorption spectra of porous silicon prepared in different conditions have been studied. HF post-anodization treatment was used to modify the porous silicon properties. It is shown that the samples obtained at higher current density show more intense visible PL. It was also found that there is a correlation between the intensity of luminescence peak and that of IR- absorption peaks related to the Si-O-Si and O₃-Si-H modes. The obtained results suggest that surface complexes related to oxygen or hydrogen with oxygen are responsible for the intense visible PL in the samples of porous silicon subjected to HF treatment and exposed to the ambient air.

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Vladimir Arsenovich Makara, V. S. Stashhuk, and V. B. Shevchenko "Infrared spectroscopy of luminescent porous silicon", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306194

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