20 April 1998 Interface roughness and confined LO phonon modes in (ZnSe)2 (ZnS)11/GaAs(100) superlattices grown by PAVPE
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306240
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Raman scattering spectra have been measured in (ZnSe)2 (ZnS)11 superlattices (SLs) grown by the photo-assisted vapor phase epitaxy technique. Spectral reveal effects from interface disordering. The magnitude of this disorder was estimated from the observed confinement of the B2 symmetry LO phonon modes in different SL areas with unequal thickness for the ZnSe quantum wells, and was found equal to one monolayer. It has been shown that such estimates are more accurate when based on spectra obtained below resonance.
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V. V. Tishchenko, V. V. Tishchenko, Y. S. Raptis, Y. S. Raptis, Evangelos Anastassakis, Evangelos Anastassakis, } "Interface roughness and confined LO phonon modes in (ZnSe)2 (ZnS)11/GaAs(100) superlattices grown by PAVPE", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306240; https://doi.org/10.1117/12.306240
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