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20 April 1998 Laser damage threshold and microfaultness of large KDP crystals
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306277
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The faulty microstructure of KDP samples having different bulk laser damage threshold (4 X 1010 W/cm2 - 5.4 X 1011 W/cm2 was studied using the methods of the three-crystal x-ray diffraction and two-crystal topography on reflection. A correlation between the dispersion of the structure-sensitive parameters characterizing the microfaultness and the value of bulk laser threshold of samples cut off large KDP crystals was established.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vitaly I. Salo, V. F. Tkachenko, M. A. Rom, Viacheslav M. Puzikov, and Marina I. Kolybayeva "Laser damage threshold and microfaultness of large KDP crystals", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306277
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