Laser radiation action on c-Si with dislocations and their diagnostics

Vladimir Arsenovich Makara; L. P. Steblenko; V. A. Pasechny; Volodymyr S. Ovechko; P. T. Petrosian; Andrii M. Dmitruk

doi:10.1117/12.306221

20 April 1998 Laser radiation action on c-Si with dislocations and their diagnostics

Vladimir Arsenovich Makara, L. P. Steblenko, V. A. Pasechny, Volodymyr S. Ovechko, P. T. Petrosian, Andrii M. Dmitruk

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306221
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The development of new technique of measurement of optical constants of the surface of solid states is carried out. It is shown that two-beams interference method of refraction index distribution measurement has a lot of advantages to a well-known ellipsometric technique. Optical reconstruction of inhomogeneities picture at the surface of c-Si is shown.

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Vladimir Arsenovich Makara, L. P. Steblenko, V. A. Pasechny, Volodymyr S. Ovechko, P. T. Petrosian, and Andrii M. Dmitruk "Laser radiation action on c-Si with dislocations and their diagnostics", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306221

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