20 April 1998 Laser radiation action on c-Si with dislocations and their diagnostics
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306221
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The development of new technique of measurement of optical constants of the surface of solid states is carried out. It is shown that two-beams interference method of refraction index distribution measurement has a lot of advantages to a well-known ellipsometric technique. Optical reconstruction of inhomogeneities picture at the surface of c-Si is shown.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Arsenovich Makara, Vladimir Arsenovich Makara, L. P. Steblenko, L. P. Steblenko, V. A. Pasechny, V. A. Pasechny, Volodymyr S. Ovechko, Volodymyr S. Ovechko, P. T. Petrosian, P. T. Petrosian, Andrii M. Dmitruk, Andrii M. Dmitruk, } "Laser radiation action on c-Si with dislocations and their diagnostics", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306221; https://doi.org/10.1117/12.306221
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