20 April 1998 Luminescence of CdSiP2 crystals
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306231
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Some general features of the behavior of Cu, Zn, Bi, S, Eu and Mn impurities in CdSiP2 crystals are studied by analyzing photo- and electron beam-excited luminescence spectra measured in a temperature range of 1.4 to 300 K, as well as by determining their electrical parameters. The impurities are established to substitute mainly the cadmium in the crystalline lattice and to promote the formation of complexes of defects, which are radiative recombination centers. Cd vacancies as well participate in the defect complex formation processes. A radiation ascribed to interstitial Cd-type defects, is discovered in CdSiP2 crystals. From comparison with Raman scattering measurements, the direct band gap was evaluated to be 2.42 eV at 1.4 K.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsezarii A. Kryskov, Tsezarii A. Kryskov, Vasyl Golonzhka, Vasyl Golonzhka, Antonina A. Gubanova, Antonina A. Gubanova, Ruslan Poveda, Ruslan Poveda, Algimantas Sodeika, Algimantas Sodeika, } "Luminescence of CdSiP2 crystals", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306231; https://doi.org/10.1117/12.306231
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