20 April 1998 Nanostructure of a-C:N films characterized by Raman spectroscopy
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306244
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Amorphous carbon films prepared by nitrogen ions assisted thermal evaporation were analyzed by means of Raman scattering. It was shown that ion bombardment of substrate during carbon evaporation leads to a nanostructure reordering. It was analyzed the changes of Raman spectra characteristics with variation of ion bombardment conditions.
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Andrey V. Vasin, Andrey V. Vasin, O. V. Vasylyk, O. V. Vasylyk, Ludmila A. Matveeva, Ludmila A. Matveeva, } "Nanostructure of a-C:N films characterized by Raman spectroscopy", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306244; https://doi.org/10.1117/12.306244
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