20 April 1998 Optical and photoelectric- and gas-sensitive properties of porous silicon
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306279
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The photoelectronic properties of samples of porous silicon received by method of anodic electrochemical etching of monocrystalline silicon in electrolytes on the base of hydrofluoric acid are investigated. Wide spectral photosensitivity from infra-red to ultraviolet of spectrum area on series of received structures is found out. The physical mechanism of photosensitivity is discussed. The electronic parameters of porous silicon samples under gas adsorption were investigated. It was opend that the ammonia adsorption changes electrical conductivity of porous silicon samples on constant and variable current of measurement. In microporous asymmetrical structures we observed electromotive force on contacts under ammonia adsorption. The physical mechanism of adsorption of ammonia is connected with interaction dipolar molecules ammonia with double electric layer on surface of porous silicon.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valentin A. Smyntyna, Valentin A. Smyntyna, Yurij A. Vashpanov, Yurij A. Vashpanov, } "Optical and photoelectric- and gas-sensitive properties of porous silicon", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306279; https://doi.org/10.1117/12.306279
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