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20 April 1998 Optical and photoelectrical studies of strain fields in semiconductor crystals
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306198
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
For some semiconductor crystals and structures the intrinsic mechanical stresses due to the nonuniform dopant distribution were investigated. p-Ge crystals with layered nonuniformities, Si wafers and Ge - GaAs heterostructures served as model samples. Using the birefringence signal measurements, a correlation was found between the dopant distribution and the intrinsic deformations stemming from them. The spectral characteristics of the Ge - GaAs heterostructures indicate at the presence of (oppositely oriented) dopant concentration gradients along the interface in Ge film and GaAs substrate. Using a combination of the optical and photoelectrical measurements enhances the possibilities for the interpretation of the experimental results and also provides a basis for developing nondestructive control methods.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris K. Serdega, V. G. Zykov, Galina N. Semenova, and L. V. Shekhovtsov "Optical and photoelectrical studies of strain fields in semiconductor crystals", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306198
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