Optical diagnostics of light-emitting Si clusters in SiO2 formed by ion implantation

Mikhail Ya. Valakh; V. A. Yukhimchuk; V. Ya. Bratus'; A. N. Nasarov; Peter L. F. Hemment; T. Komoda

doi:10.1117/12.306228

20 April 1998 Optical diagnostics of light-emitting Si clusters in SiO₂ formed by ion implantation

Mikhail Ya. Valakh, V. A. Yukhimchuk, V. Ya. Bratus', A. N. Nasarov, Peter L. F. Hemment, T. Komoda

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306228
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

Si/SiO₂ structures implanted by Si⁺ ions are investigated with photoluminescence (PL), electron spin resonance and low frequency Raman scattering (RS) methods. The nature of the PL band at 2.0 eV that appears after implantation is identified. The sizes of Si nanocrystals formed after the implantation and thermal annealing at T equals 1200 degree(s)C are determined by low frequency RS method. It is shown that low temperature plasma treatment of the annealed samples leads to the increase of PL intensity.

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Mikhail Ya. Valakh, V. A. Yukhimchuk, V. Ya. Bratus', A. N. Nasarov, Peter L. F. Hemment, and T. Komoda "Optical diagnostics of light-emitting Si clusters in SiO₂ formed by ion implantation", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306228

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